Defect Structures in Heavily In-Doped II-VI Semiconductors

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1341-1346

DOI:

10.4028/www.scientific.net/MSF.258-263.1341

Citation:

V. Ostheimer et al., "Defect Structures in Heavily In-Doped II-VI Semiconductors", Materials Science Forum, Vols. 258-263, pp. 1341-1346, 1997

Online since:

December 1997

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$35.00

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