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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defect Structures in Heavily In-Doped II-VI...

Defect Structures in Heavily In-Doped II-VI Semiconductors

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1341-1346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1341

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Online since:

December 1997

Authors:

V. Ostheimer, T. Filz, Joe Hamann, St. Lauer, D. Weber, Herbert Wolf, Th. Wichert

Keywords:

A-Centre, Compensation, Donors, II-VI Compounds, Indium, PAC

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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