Paper Titles

Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type Al_xGa_1-xAs
p.1303

Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance
p.1309

ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As
p.1315

Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
p.1321

Degradation in II-VI Laser Diodes
p.1329

Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy
p.1335

Defect Structures in Heavily In-Doped II-VI Semiconductors
p.1341

The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS
p.1347

Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe
p.1353

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Degradation in II-VI Laser Diodes

Degradation in II-VI Laser Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1329-1334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1329

Citation:

Cite this paper

Online since:

December 1997

Authors:

Kazushi Nakano, Akira Ishibashi

Keywords:

Degradation, Laser Diode, Recombination Enhanced Defect Reaction, ZnMgSe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: