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ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As
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Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Inverted Charge States of Anion and Cation-Site...

Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1321-1328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1321

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Online since:

December 1997

Authors:

D.J. Chadi

Keywords:

CdTe, Compensation, Divacancy, GaAs, Gallium Nitride (GaN), III-V and II-VI Semiconductors, Native Defects, Vacancy, ZnS, ZnSe, ZnTe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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