Paper Titles

Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
p.1321

Degradation in II-VI Laser Diodes
p.1329

Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy
p.1335

Defect Structures in Heavily In-Doped II-VI Semiconductors
p.1341

The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS
p.1347

Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe
p.1353

Nature of Dislocation-Related Deep Level Defects in CdS
p.1359

NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:M_III
p.1365

Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence
p.1371

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263The Role of Cation Vacancy in Compensation of...

The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1347-1352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1347

Citation:

Cite this paper

Online since:

December 1997

Authors:

U.V. Desnica, I.D. Desnica-Franković, R. Magerle, A. Burchard, Manfred Deicher

Keywords:

Cation Vacancy, CdS, Compensation, Cu, Fast Diffusers, II-VI, In, Li, PAC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: