Paper Titles

Defect Structures in Heavily In-Doped II-VI Semiconductors
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The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS
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Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe
p.1353

Nature of Dislocation-Related Deep Level Defects in CdS
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NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:M_III
p.1365

Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence
p.1371

Observation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSe
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Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE
p.1383

Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263NMR Study of Carrier States and Trapping Complexes...

NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:M_III

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1365-1370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1365

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Online since:

December 1997

Authors:

W.W. Warren, N. Roberts, R.P. Wang, Arthur W. Sleight

Keywords:

Complex, Group III Impurity States, II-VI Compounds, NMR, Transparent Conductor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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