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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Donor Doping of ZnSe: Lattice Location and...

Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1389-1394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1389

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Online since:

December 1997

Authors:

Bernd Ittermann, G. Welker, F. Kroll, F. Mai, K. Marbach, H. Ackermann, H.J. Stöckmann, E. Oldekop, W.-D. Zeitz

Keywords:

Boron, Donor Doping, Ion Implantation, ZnSe, β-NMR

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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