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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Determination of the Lattice Site of Nitrogen...

Determination of the Lattice Site of Nitrogen after Implantation into ZnSe

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1395-1400

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1395

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Online since:

December 1997

Authors:

K. Marbach, Bernd Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, P. Meier, D. Peters, H. Thiess, H. Ackermann, H.J. Stöckmann, W.-D. Zeitz, H. Wenisch, D. Hommel, G. Landwehr

Keywords:

Acceptor Doping, Ion Implantation, Nitrogen, ZnSe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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