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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Interface Defects and their Effect on the...

Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1383-1388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1383

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Online since:

December 1997

Authors:

D. Seghier, I.S. Hauksson, H.P. Gislason, K.A. Prior, B.C. Cavenett

Keywords:

Admittance, Capacitance, GaAs, Heterojunction, Hysteresis, Interface, ZnSe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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