Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1383-1388

DOI:

10.4028/www.scientific.net/MSF.258-263.1383

Citation:

D. Seghier et al., "Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE", Materials Science Forum, Vols. 258-263, pp. 1383-1388, 1997

Online since:

December 1997

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$35.00

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