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HomeMaterials Science ForumMaterials Science Forum Vols. 276-277Modeling of Growth Processes in Epitaxial Reactors

Modeling of Growth Processes in Epitaxial Reactors

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Theoretical and Technological Aspects of Crystal Growth

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Periodical:

Materials Science Forum (Volumes 276-277)

Pages:

135-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.276-277.135

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Online since:

March 1998

Authors:

S. Carrà, C. Cavallotti, Maurizio Masi

Keywords:

Chemical Vapor Deposition (CVD), Epitaxy, Low-Pressure CVD, Mathematical Models, MOCVD, Plasma Enhanced Chemical Vapour Deposition, Surface Kinetics

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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