Paper Titles

Atomic Scale Simulation of the (310) [001] Symmetric Tilt Grain Boundary in the B2 Stoichiometric FeAl Ordered Alloy
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Computer Simulation of Tilt Grain Boundaries in Alloys with L1₂ and B2 Superlattices
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Calculation of the Energy of Extend Defects in Zinc by the Semi-Empirical Tight-Binding Method
p.219

Modified Stillinger-Weber Potential for Planar Defects Modeling in GaN
p.223

Relative Stability of Two Structures of the Σ=11<011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method
p.227

Ab Initio Study of Grain Boundaries in SiC and Si
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TEM Investigation of Metal-Oxide Interfaces in the Ni-20Cr System
p.235

The Character of Steps on Gamma/Alpha-2 Interfaces in Lamellar TiAl-Based Alloys
p.239

The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary
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HomeMaterials Science ForumMaterials Science Forum Vols. 294-296Relative Stability of Two Structures of the...

Relative Stability of Two Structures of the Σ=11<011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method

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Intergranular and Interphase Boundaries in Materials III

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Periodical:

Materials Science Forum (Volumes 294-296)

Pages:

227-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.294-296.227

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Online since:

November 1998

Authors:

Jin Ming Chen, A. Hairie, Gerard Nouet, E. Paumier

Keywords:

Atomic Structure, Germanium, O(N) Method, Semi-Empirical Tight-Binding, Silicon, Stability, Tilt Grain Boundary

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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