The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary

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Periodical:

Materials Science Forum (Volumes 294-296)

Edited by:

Pavel Lejcek and Václav Paidar

Pages:

243-246

DOI:

10.4028/www.scientific.net/MSF.294-296.243

Citation:

V. Potin et al., "The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary", Materials Science Forum, Vols. 294-296, pp. 243-246, 1999

Online since:

November 1998

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