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HomeMaterials Science ForumMaterials Science Forum Vols. 294-296The Atomic Structure of Tilt Grain Boundaries in...

The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire: A Case Study, the Σ31 (11-4-70) Symmetric Grain Boundary

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Intergranular and Interphase Boundaries in Materials III

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Periodical:

Materials Science Forum (Volumes 294-296)

Pages:

243-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.294-296.243

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Online since:

November 1998

Authors:

V. Potin, A. Béré, Piere Ruterana, Gerard Nouet

Keywords:

Aluminum Nitride (AlN), Dislocation Core, Gallium Nitride (GaN), High Resolution Electron Microscopy (HREM), Sapphire, Tilt Grain Boundary

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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