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HomeMaterials Science ForumMaterials Science Forum Vols. 294-296Grain Boundary Structure and Chemical Bonding in...

Grain Boundary Structure and Chemical Bonding in Boron Doped Silicon Carbide

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Intergranular and Interphase Boundaries in Materials III

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Periodical:

Materials Science Forum (Volumes 294-296)

Pages:

301-304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.294-296.301

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Online since:

November 1998

Authors:

Hui Gu

Keywords:

Chemical Bonding, EELS, Grain Boundary, Segregation, Silicon Carbide (SiC)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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