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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Influence of Growth Defects on Carrier Lifetime...

Influence of Growth Defects on Carrier Lifetime and Transport in Semiinsulating GaAs Studied by Transient Light-Induced Grating Technique

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

115-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.115

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Online since:

December 1998

Authors:

V. Mizeikis, Kęstutis Jarašiūnas, Vytautas Gudelis, M. Sūdžius

Keywords:

Growth Defects, Semiinsulating GaAs, Transient Light-Induced Gratings

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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