Influence of Growth Defects on Carrier Lifetime and Transport in Semiinsulating GaAs Studied by Transient Light-Induced Grating Technique

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Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

115-118

DOI:

10.4028/www.scientific.net/MSF.297-298.115

Citation:

V. Mizeikis et al., "Influence of Growth Defects on Carrier Lifetime and Transport in Semiinsulating GaAs Studied by Transient Light-Induced Grating Technique", Materials Science Forum, Vols. 297-298, pp. 115-118, 1999

Online since:

December 1998

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