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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Picosecond Switching due to Electron Tunneling and...

Picosecond Switching due to Electron Tunneling and Avalanche in a GaAs/Al_0.34Ga_0.66As Diode

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.95

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Online since:

December 1998

Authors:

A. Geizutis, A. Krotkus, A. Reklaitis, M. Asche

Keywords:

Hot Carriers, III-V Semiconductor, Impact Ionisation, MC Methods, Tunneling

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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