A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

153-155

DOI:

10.4028/www.scientific.net/MSF.363-365.153

Citation:

Y.Y. Shan et al., "A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP", Materials Science Forum, Vols. 363-365, pp. 153-155, 2001

Online since:

April 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.