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A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe₂
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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365A Positron Annihilation Study of Compensation...

A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

153-155

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.153

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Online since:

April 2001

Authors:

Y.Y. Shan, Ai Hong Deng, Y.W. Zhao, C.C. Ling, S. Fung, C.D. Beling

Keywords:

Compensation Defects, LEC-Grown InP, Positron Annihilation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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