Paper Titles

Positron Beam Doppler and Lifetime Studies on Disordered and Amorphous Si
p.129

Magic Number Vacancy Clusters in Graphite and Silicon
p.132

Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
p.135

Electric Field Dependent Positronium Formation in α-SiO₂
p.138

Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy
p.141

Defect Studies in BaTiO₃ Ceramics Using Positron Annihilation Spectroscopy
p.144

Positron Study of Cu-Se, In-Se and CuInSe₂ Thin Films
p.147

A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe₂
p.150

A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP
p.153

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Characterization of Radiation- Induced Defects in...

Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

141-143

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.141

Citation:

Cite this paper

Online since:

April 2001

Authors:

S. Brunner, Werner Puff, Adam G. Balogh, Peter Mascher

Keywords:

Irradiation, Isochronal Annealing, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: