Paper Titles

Positron Annihilation Spectroscopic Studies of 6H Silicon Carbide
p.120

Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons
p.123

Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC
p.126

Positron Beam Doppler and Lifetime Studies on Disordered and Amorphous Si
p.129

Magic Number Vacancy Clusters in Graphite and Silicon
p.132

Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
p.135

Electric Field Dependent Positronium Formation in α-SiO₂
p.138

Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy
p.141

Defect Studies in BaTiO₃ Ceramics Using Positron Annihilation Spectroscopy
p.144

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Magic Number Vacancy Clusters in Graphite and...

Magic Number Vacancy Clusters in Graphite and Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

132-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.132

Citation:

Cite this paper

Online since:

April 2001

Authors:

Mitsuru Hasegawa, Z. Tang, Yasuyoshi Nagai, T. Shimamura, K. Nakazuru, Toshinobu Chiba, M. Saito

Keywords:

First-Principle Calculations, Graphite, Magic Number Vacancy Cluster, Positron Annihilation, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: