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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Swift Heavy Ion Irradiation Effects in SiC...

Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

123-125

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.123

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Online since:

April 2001

Authors:

L. Liszkay, K. Havancsák, Marie France Barthe, P. Desgardin, L. Henry, Z. Kajcsos, Gábor Battistig, E. Szilágyi, V.A. Skuratov

Keywords:

Amorphisation, Defect Profile, Ion Implantation, Irradiation, Semiconductor, Silicon, Silicon Carbide (SiC), Swift Ions, TRIM

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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