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Electrically Induced Metastability in SI-GaAs Studied by Positron Lifetime Spectroscopy
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Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
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Changes in the Positron-Electron Momentum Distribution in GaAs Brought about by Chopped Light
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Positron Deep-Level Transient Spectroscopy in Semi-Insulating-GaAs Using the Positron Velocity Transient Method
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Positron Annihilation Spectroscopic Studies of 6H Silicon Carbide
p.120

Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons
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Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC
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Positron Beam Doppler and Lifetime Studies on Disordered and Amorphous Si
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Magic Number Vacancy Clusters in Graphite and Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Positron Annihilation Spectroscopic Studies of 6H...

Positron Annihilation Spectroscopic Studies of 6H Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

120-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.120

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Online since:

April 2001

Authors:

Y.F. Hu, C.H. Lam, C.C. Ling, S. Fung, C.D. Beling, H.M. Weng

Keywords:

6H-SiC, Positron Diffusion Length, Positron Lifetime Technique

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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