Paper Titles

Positron-Induced Ion-Desorption from the Oxidized Ni Surface
p.526

Latest Version of the Munich Pulsed Low Energy Positron System
p.529

'Smart Cut' Silicon by Proton Implantation: Lifetime Studies with a Pulsed Positron Beam
p.532

Positron Annihilation Induced Auger Electron Spectroscopy (PAES)
p.537

Time-of-Flight Analysis of Positron-Annihilation Induced Auger-Electrons and Re-Emitted Positrons
p.542

Positron-Age-Momentum Correlation
p.547

Positron 2D-ACAR Study of the Quasi-One-Dimensional Organic Superconductor (TMTSF)₂ClO₄
p.552

Fermi Surface Study of CeRu₂Si₂ above the Kondo Temperature
p.555

Fermi Surface of Yttrium
p.558

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Time-of-Flight Analysis of Positron-Annihilation...

Time-of-Flight Analysis of Positron-Annihilation Induced Auger-Electrons and Re-Emitted Positrons

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

542-546

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.542

Citation:

Cite this paper

Online since:

April 2001

Authors:

Toshiyuki Ohdaira, Ryoichi Suzuki, Tomohisa Mikado

Keywords:

Oxidation, PAES, Re-Emission, Silicon, Silicon Carbide (SiC), Slow Positron Beam, Surface, TOF

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: