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HomeMaterials Science ForumMaterials Science Forum Vols. 384-385Injection Lasers Based on Intraband Carrier...

Injection Lasers Based on Intraband Carrier Transitions

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Ultrafast Phenomena in Semiconductors 2001

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Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.209

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Online since:

January 2002

Authors:

E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann

Keywords:

Auger Recombination, Intersubband Transitions, Laser, Mid-Infrared, Quantum Well

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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