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HomeMaterials Science ForumMaterials Science Forum Vols. 384-385Theoretical Design and Analysis of SiC...

Theoretical Design and Analysis of SiC n++pn-n+nn++-Diodes for 400 GHz Microwave Power Generation

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Ultrafast Phenomena in Semiconductors 2001

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Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.217

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Online since:

January 2002

Authors:

Viktor Gružinskis, E. Starikov, P. Shiktorov, Jian Hui Zhao

Keywords:

Microwave Generation, Monte Carlo Particle Simulation, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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