Paper Titles

GHz-THz Detection by Asymmetrically-Shaped GaAs: Bulk Material versus Nanostructures
p.193

Terahertz Semiconductor Laser Structures
p.197

Comparative Study of Terahertz Generation in Wide Band Gap Bulk Semiconductors
p.205

Injection Lasers Based on Intraband Carrier Transitions
p.209

InN Submicron Structure for Generation at Terahertz Frequencies
p.213

Theoretical Design and Analysis of SiC n++pn-n+nn++-Diodes for 400 GHz Microwave Power Generation
p.217

Influence of Uniaxial Stress on the Polarization of Spontaneous Emission from p-Ge
p.221

Generation and Frequency Transformation of High-Frequency Radiation in Bi-Modal Electrodynamic System Filled by Asymmetric Multilayer Heterostructure
p.227

Ultrafast Goes Local
p.233

HomeMaterials Science ForumMaterials Science Forum Vols. 384-385InN Submicron Structure for Generation at...

InN Submicron Structure for Generation at Terahertz Frequencies

Article Preview

Abstract:

You might also be interested in these eBooks

Ultrafast Phenomena in Semiconductors 2001

Info:

Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.213

Citation:

Cite this paper

Online since:

January 2002

Authors:

Viktor Gružinskis, E. Starikov, P. Shiktorov

Keywords:

Monte Carlo Particle Simulation, Nitride, Terahertz Generation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: