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Self-Healing Phenomenon of Micropipes in Silicon Carbide
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A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth
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Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
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The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates
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Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates
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The Development of 4H-SiC {03-38} Wafers
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Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
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Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
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Resistivity Mapping of Semi-Insulating 6H-SiC Wafers
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Temperature Dependence of Sublimation Growth of...

Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.119

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Online since:

April 2002

Authors:

Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

Keywords:

(11-20) Plane, Growth Model, Growth Temperature, Sublimation Growth, Two-Step Growth

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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