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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

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Paper Title Page

Preface

Silicon Carbide Technology in New Era

Authors: Hiroyuki Matsunami

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Overview

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Characterisation and Defects in Silicon Carbide

Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén

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Opportunities and Technical Strategies for Silicon Carbide Device Development

Authors: James A. Cooper

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

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Growth and Defect Reduction of Bulk SiC Crystals

Authors: Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro

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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman

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Lateral Enlargement of Silicon Carbide Crystals

Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén

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Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Authors: Shin Ichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai

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