Preface
Silicon Carbide Technology in New Era
p.3
p.3
Overview
p.4
p.4
Characterisation and Defects in Silicon Carbide
p.9
p.9
Opportunities and Technical Strategies for Silicon Carbide Device Development
p.15
p.15
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
p.23
p.23
Growth and Defect Reduction of Bulk SiC Crystals
p.29
p.29
Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
p.35
p.35
Lateral Enlargement of Silicon Carbide Crystals
p.39
p.39
Overview
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
4-4
Online since:
April 2002
Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
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