Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

35-38

DOI:

10.4028/www.scientific.net/MSF.389-393.35

Citation:

S. P. Wang et al., "Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport", Materials Science Forum, Vols. 389-393, pp. 35-38, 2002

Online since:

April 2002

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$35.00

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