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Characterisation and Defects in Silicon Carbide
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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
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Growth and Defect Reduction of Bulk SiC Crystals
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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
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Lateral Enlargement of Silicon Carbide Crystals
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Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Growth of 3-inch Diameter 6H-SiC Single Crystals...

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

35-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.35

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Online since:

April 2002

Authors:

Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman

Keywords:

Crystal Growth, Micropipe, PVT, Silicon Carbide (SiC), Sublimation, Wafer Diameter

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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