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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High Quality SiC Substrates for Semiconductor...

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

23-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.23

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Online since:

April 2002

Authors:

Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

Keywords:

Carbon Vacancy, DLTS, EPR, Micropipe, Resistivity, Semi-insulating (SI), Sublimation Growth, Thermal Conductivity (TC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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