Paper Titles

Opportunities and Technical Strategies for Silicon Carbide Device Development
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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
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Growth and Defect Reduction of Bulk SiC Crystals
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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
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Lateral Enlargement of Silicon Carbide Crystals
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Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
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4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
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The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
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Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Lateral Enlargement of Silicon Carbide Crystals

Lateral Enlargement of Silicon Carbide Crystals

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

39-42

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.39

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Online since:

April 2002

Authors:

Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén

Keywords:

4H-SiC, 6H-SiC, Lateral Growth

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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