Paper Titles

Silicon Carbide Technology in New Era
p.3

Characterisation and Defects in Silicon Carbide
p.9

Opportunities and Technical Strategies for Silicon Carbide Device Development
p.15

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
p.23

Growth and Defect Reduction of Bulk SiC Crystals
p.29

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
p.35

Lateral Enlargement of Silicon Carbide Crystals
p.39

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Opportunities and Technical Strategies for Silicon...

Opportunities and Technical Strategies for Silicon Carbide Device Development

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

15-22

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.15

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Cite this paper

Online since:

April 2002

Authors:

James A. Cooper

Keywords:

Bipolar Junction Transistor (BJT), Bipolar Transistors, GTOs, IMPATT Diode Oscillators, Junction Field Effect Transistor (JFET), MESFET, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Microwave Devices, MOS Mobility, PiN Diode, Power Switching Devices, Schottky Diode, Silicon Carbide (SiC), SITs, Static Induction Transistor, Thyristor

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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