Materials Science Forum Vols. 389-393

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https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth

Authors: Matthias Bickermann, Roland Weingärtner, Dieter Hofmann, Thomas L. Straubinger, Albrecht Winnacker

127

Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

Authors: Thomas L. Straubinger, Matthias Bickermann, Michael Rasp, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

131

Resistivity Mapping of Semi-Insulating 6H-SiC Wafers

Authors: Matthew D. Roth, V.D. Heydemann, W.C. Mitchel, Nikolay K. Yushin, M. Sharma, Shao Ping Wang, Cengiz M. Balkas

135

On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

Authors: Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker

139

Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Authors: Etienne Pernot, Mikhail Anikin, Michel Pons, O. Chaix-Pluchery, Francis Baillet, Igor Matko, Roland Madar

143

Full Si Wafer Conversion into Bulk 3C-SiC

Authors: André Leycuras, Olivier Tottereau, Patrice Vicente, L.A. Falkovsky, P. Girard, Jean Camassel

147

QuaSiC Smart-Cut^® Substrates for SiC High Power Devices

Authors: Fabrice Letertre, E. Jalaguier, Lea Di Cioccio, Francois Templier, Jean Marie Bluet, C. Banc, Igor Matko, Bernard Chenevier, Edwige Bano, Gérard Guillot, Thierry Billon, B. Aspar, Roland Madar, B. Ghyselen

151

CVD SiC Powder for High-Purity SiC Source Material

Authors: Sashiro Ezaki, M. Saito, K. Ishino

155

Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor

Authors: Yoshimitsu Yamada, Kazukiyo Sagawa

159

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Authors: Tsunenobu Kimoto, S. Nakazawa, Keiko Fujihira, T. Hirao, Shun-ichi Nakamura, Yi Chen, K. Hashimoto, Hiroyuki Matsunami

165