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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Growth and Evaluation of High Quality SiC Crystal by Sublimation Method

Authors: Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

87

'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging

Authors: Peter J. Wellmann, Z.G. Herro, Thomas L. Straubinger, Albrecht Winnacker

91

Influence of the Crystal Thickness on the SiC PVT Growth Rate

Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan

95

Micropipe Formation Model via Surface Step Interaction

Authors: Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro

99

Self-Healing Phenomenon of Micropipes in Silicon Carbide

Authors: Atsuto Okamoto, Yoshiki Seno, Naohiro Sugiyama, Fusao Hirose, Kazukuni Hara, Toshihiko Tani, Daisuke Nakamura, Nobuo Kamiya, Shoichi Onda

103

A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth

Authors: Naoki Oyanagi, Shin Ichi Nishizawa, Kazuo Arai

107

Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Authors: Tomohisa Kato, Naoki Oyanagi, Yasuo Kitou, Shin Ichi Nishizawa, Kazuo Arai

111

The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates

Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

115

Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

119

The Development of 4H-SiC {03-38} Wafers

Authors: Koji Nakayama, Youichi Miyanagi, Hiromu Shiomi, Shigehiro Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami

123

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