Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor

Authors: Rong Jun Wang, I. Bhat, T. Paul Chow

211

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Johji Nishio, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

215

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Örjan Danielsson, S. Jönsson, Anne Henry, Erik Janzén

219

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Authors: Michel Pons, Jérôme Mezière, Stephane Wan Tang Kuan, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon, Roland Madar

223

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

227

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Authors: Seoyong Ha, P. Mieszkowski, L.B. Rowland, Marek Skowronski

231

The Effect of Epitaxial Growth on Warp of SiC Wafers

Authors: Koji Nakayama, Youichi Miyanagi, K. Maruyama, Yoshihiro Okamoto, Hiromu Shiomi, Shigehiro Nishino

235

In Situ Etching of 4H-SiC in H₂ with Addition of HCl for Epitaxial CVD Growth

Authors: Jie Zhang, Olof Kordina, Alexsandre Ellison, Erik Janzén

239

Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD

Authors: Kunimasa Takahashi, Masao Uchida, Toshiya Yokogawa, Osamu Kusumoto, Kenya Yamashita, Ryouko Miyanaga, Makoto Kitabatake