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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

Authors: Yoichi Okui, Chacko Jacob, Satoru Ohshima, Shigehiro Nishino

331

Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry

Authors: Hideki Shimizu, Takaomi Ohba, Kensaku Hisada

335

In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD

Authors: Guo Sheng Sun, M.C. Luo, Lei Wang, S.R. Zhu, Jin Min Li, Yi Ping Zeng, L.Y. Lin

339

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Authors: Thierry Chassagne, Gabriel Ferro, Huiyao Wang, Y. Stoimenos, Hervé Peyre, Sylvie Contreras, Jean Camassel, Yves Monteil, B. Ghyselen

343

Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace

Authors: Seisaku Hirai, Fumihiko Jobe, Motoi Nakao, Katsutoshi Izumi

347

Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer

Authors: Hideki Nakazawa, M. Suemitsu

351

Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces

Authors: Christian Förster, Pierre M. Masri, Joerg Pezoldt

355

Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

Authors: Olga H. Krafcsik, György Vida, V. Katalin Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony

359

Reaction Mechanism of the Carbonization Process by Low-Energy Ion Subplantation

Authors: Nobuteru Tsubouchi, Akiyoshi Chayahara, Yoshiaki Mokuno, Atsushi Kinomura, Yuji Horino

363

Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

Authors: Kanji Yasui, Masahiro Hashiba, Yuzuru Narita, Tadashi Akahane

367