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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
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Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
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Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer
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Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces
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Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
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Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Formation of Extremely Thin, Quasi-Single-Domain...

Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.351

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Online since:

April 2002

Authors:

Hideki Nakazawa, M. Suemitsu

Keywords:

Antiphase Boundary (APB), Gas Source Molecular Beam Epitaxy, Low-Temperature Interfacial Buffer Layer, Monomethylsilane

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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