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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Void-Free Epitaxial Growth of Cubic SiC...

Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

359-362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.359

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Online since:

April 2002

Authors:

Olga H. Krafcsik, György Vida, V. Katalin Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony

Keywords:

CO-Annealing, Epitaxial Growth, Void-Free

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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