Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

359-362

Citation:

O. H. Krafcsik et al., "Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon", Materials Science Forum, Vols. 389-393, pp. 359-362, 2002

Online since:

April 2002

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$38.00

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