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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Comparison of the Growth Characteristics of SiC on...

Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.367

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Online since:

April 2002

Authors:

Kanji Yasui, Masahiro Hashiba, Yuzuru Narita, Tadashi Akahane

Keywords:

3C-SiC, Dimethysilane, Low-Pressure CVD, Triode Plasma CVD

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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