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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Study of Metamorphosing Top Si Layer of SOI Wafer...

Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

347-350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.347

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Online since:

April 2002

Authors:

Seisaku Hirai, Fumihiko Jobe, Motoi Nakao, Katsutoshi Izumi

Keywords:

Carbonization, Electron-Photon-Merged Devices, SOI

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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