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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Selective Epitaxial Growth of Pyramidal 3C-SiC on...

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

331-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.331

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Online since:

April 2002

Authors:

Yoichi Okui, Chacko Jacob, Satoru Ohshima, Shigehiro Nishino

Keywords:

HMDS, Lateral Epitaxial Overgrowth, Scanning Electron Microscope (SEM), Selective Epitaxial Growth

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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