Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

327-330

Citation:

A. Bakin et al., "Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers", Materials Science Forum, Vols. 389-393, pp. 327-330, 2002

Online since:

April 2002

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.