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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Growth of 3C-SiC on Si(100) by LPCVD and...

Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

327-330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.327

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Online since:

April 2002

Authors:

Andrey Bakin, I. Behrens, A.A. Ivanov, E. Peiner, D. Piester, H.-H. Wehmann, A. Schlachetzki

Keywords:

Chemical Vapor Deposition (CVD), Patterning, Selective Etching, Selective Growth, SiC on Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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