Paper Titles

Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC
p.295

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition
p.299

In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
p.303

SiO₂ as Oxygen Source for the Chemical Vapor Transport of SiC
p.307

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
p.311

3C-SiC Growth on 6H-SiC (0001) Substrates
p.315

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
p.319

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
p.323

Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers
p.327

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC...

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

311-314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.311

Citation:

Cite this paper

Online since:

April 2002

Authors:

Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, X. Huang, Michael Dudley

Keywords:

3C-SiC, Cubic Polytype, Heteroepitaxy, Lattice Mismatch, Nucleation, Pseudomorphic, Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: