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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393SiO2 as Oxygen Source for the Chemical Vapor...

SiO₂ as Oxygen Source for the Chemical Vapor Transport of SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

307-310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.307

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Online since:

April 2002

Authors:

Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil

Keywords:

Chemical Vapor Transport, Epitaxy, SiO₂, Thermodynamic Simulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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