Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

291-294

DOI:

10.4028/www.scientific.net/MSF.389-393.291

Citation:

A. Syrkin et al., "Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts", Materials Science Forum, Vols. 389-393, pp. 291-294, 2002

Online since:

April 2002

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