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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Liquid-Phase Epitaxial Growth of Heavily Doped Al...

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

291-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.291

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Online since:

April 2002

Authors:

Alexander Syrkin, Vladimir Dmitriev, O. Kovalenkov, D. Bauman, John Crofton

Keywords:

Liquid Phase Epitaxy (LPE), Ohmic Contact, Silicon Carbide Devices

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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