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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Homoepitaxial Growth of Cubic Silicon Carbide by...

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

279-282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.279

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Online since:

April 2002

Authors:

Tomoaki Furusho, Toshiyuki Miyanagi, Yoichi Okui, Satoru Ohshima, Shigehiro Nishino

Keywords:

Cubic Polytype, High Growth Rate, Homoepitaxial Growth, Sublimation Epitaxy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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