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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3933C-SiC(100) Homoepitaxial Growth by Chemical Vapor...

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

275-278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.275

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Online since:

April 2002

Authors:

Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida

Keywords:

3C-SiC, Homoepitaxial Growth, Schottky Barrier Junctions

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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