Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

267-270

Citation:

J. K. Jeong et al., "Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor", Materials Science Forum, Vols. 389-393, pp. 267-270, 2002

Online since:

April 2002

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$38.00

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