Paper Titles

Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
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Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
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Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
p.259

Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
p.263

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
p.267

TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
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3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
p.279

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
p.283

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Homoepitaxial Growth of 4H-SiC on Porous Substrate...

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

267-270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.267

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Online since:

April 2002

Authors:

Jae Kyeong Jeong, Myung Yoon Um, Hoon Joo Na, Bum Seok Kim, In Bok Song, Hyeong Joon Kim

Keywords:

BTMSM, Chemical Vapor Deposition (CVD), Homoepitaxy, Porous SiC, RSM

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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