Paper Titles

Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
p.255

Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
p.259

Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
p.263

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
p.267

TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
p.271

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
p.275

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
p.279

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
p.283

Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
p.287

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer...

TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

271-274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.271

Citation:

Cite this paper

Online since:

April 2002

Authors:

L.M. Sorokin, John L. Hutchison, Jeremy Sloan, G.N. Mosina, N.S. Savkina, V.B. Shuman, Alexander A. Lebedev

Keywords:

Cross-Sectional TEM, EDX Spectrum, Epitaxy, Porous Layer Characteristics, Porous SiC, Sublimation Growth, Substrate Defects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: