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Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
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Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Formation of Epitaxial Mesa Structures on 4H-SiC...

Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.255

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Online since:

April 2002

Authors:

Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Hiroyuki Matsunami

Keywords:

3C-SiC Inclusions, Anisotropy, Homoepitaxy, Lateral Growth, Mesa Structures

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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