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Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
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Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Homoepitaxial 'Web Growth' of SiC to Terminate...

Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.251

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Online since:

April 2002

Authors:

Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry, Glenn M. Beheim, Emye Benavage, Phillip B. Abel, William M. Vetter, Michael Dudley

Keywords:

Atomic Force Microscope (AFM), Cantilever, Chemical Vapor Deposition (CVD), Homoepitaxial Growth, Step-Free Surfaces, SWBXT, Web Growth

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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