Paper Titles

TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
p.271

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
p.275

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
p.279

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
p.283

Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
p.287

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts
p.291

Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC
p.295

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition
p.299

In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
p.303

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Effect of the Si Droplet Size on the VLS Growth...

Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

287-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.287

Citation:

Cite this paper

Online since:

April 2002

Authors:

Gabriel Ferro, Didier Chaussende, François Cauwet, Yves Monteil

Keywords:

Epitaxy, Liquid, Silicon, VLS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: